Diamond growth on a (100) oriented Si substrate by a laser-induced chem. transport reaction (LICTR) method is described. SEM indicated that the LICTR-deposited diamonds had a cubic structure. Their Raman spectrum obsd. at Stokes shifts between 1300 and 1370 cm-1 showed a single sharp line with the position and full width at half-max. very close to those of natural diamond. These results contrast with those obtained for diamond produced by hot-filament CVD.