An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS memory device has been produced where the advantages that positive and negative pull-in voltages can be used to charge and discharge the dielectric and the capacitance's ratio can be used to retain the charge in the dielectric layer with low charge value but with high retention.