Oxide charging and memory effects in suspended-gate FET

An original study of the dielectric charging in a suspended gate FET device (SG-FET) and its use for memory applications is reported. Combining a movable conductive gate with the ability to retain charge on top of the dielectric layer of FET device, a MEMS memory device has been produced where the advantages that positive and negative pull-in voltages can be used to charge and discharge the dielectric and the capacitance's ratio can be used to retain the charge in the dielectric layer with low charge value but with high retention.


Published in:
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on, 685-688
Year:
2008
ISSN:
1084-6999
Keywords:
Laboratories:




 Record created 2009-07-15, last modified 2018-09-13


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)