Laterally vibrating-body double gate MOSFET with improved signal detection

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.


Published in:
Device Research Conference, 2008, 155-156
Year:
2008
ISSN:
1548-3770
Keywords:
Laboratories:




 Record created 2009-07-15, last modified 2018-09-13


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