Nano-gap high quality factor thin film SOI MEM resonators

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of 55 k is measured at 18 V DC polarization and values still below 100 k can be measured at 14 V.


Published in:
NSTI Nanotech, The Nanotechnology Conference and Trade Show, 2008
Year:
2008
Keywords:
Laboratories:




 Record created 2009-07-15, last modified 2018-03-17


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