000139112 001__ 139112
000139112 005__ 20180913055328.0
000139112 02470 $$2ISI$$a000253416100027
000139112 037__ $$aCONF
000139112 245__ $$aGradient free sol-gel Pb(Zr-x,Ti1-x)O-3 thin films
000139112 269__ $$a2007
000139112 260__ $$aNone$$bIEEE$$c2007
000139112 336__ $$aConference Papers
000139112 520__ $$aPb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from +/- 12 to +/- 12.5 at% amplitude in Zr concentration fluctuations. The obtained 2 pin thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsilon(33f) was obtained as 1620, and the remanent transverse piezoelectric coefficient e(31f) was measured as -17.7 C/m(2).
000139112 700__ $$0240533$$aCalame, F.$$g111410
000139112 700__ $$0240369$$aMuralt, P.$$g105945
000139112 7112_ $$a16th IEEE International Symposium on Applications of Ferroelectrics$$cNara, Japan$$dMay 27-31, 2007
000139112 773__ $$j1-2$$q80-82$$tIEEE International Symposium on Applications of Ferroelectrics
000139112 909C0 $$0252012$$pLC$$xU10334
000139112 909CO $$ooai:infoscience.tind.io:139112$$pconf$$pSTI
000139112 937__ $$aLC-CONF-2009-003
000139112 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000139112 980__ $$aCONF