@article{Calame:139112,
      title = {Gradient free sol-gel Pb(Zr-x,Ti1-x)O-3 thin films},
      author = {Calame, F. and Muralt, P.},
      publisher = {IEEE},
      journal = {IEEE International Symposium on Applications of  Ferroelectrics},
      address = {None},
      volume = {1-2},
      pages = {80-82},
      year = {2007},
      abstract = {Pb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition  were synthesized by means of a modified sol-gel route on  Pt(111)/TiOx/SiO2/Si substrates. The usually observed  gradient in B-site composition could be reduced from +/- 12  to +/- 12.5 at% amplitude in Zr concentration fluctuations.  The obtained 2 pin thick, dense and crack free films  exhibited a {100}-texture index of 98.4%. Grain diameters  increased at the same time by 50%. Dielectric and  piezoelectric properties were remarkably improved. The  relative dielectric constant epsilon(33f) was obtained as  1620, and the remanent transverse piezoelectric coefficient  e(31f) was measured as -17.7 C/m(2).},
}