Pb(Zr-x,Ti1-x)O-3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from +/- 12 to +/- 12.5 at% amplitude in Zr concentration fluctuations. The obtained 2 pin thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsilon(33f) was obtained as 1620, and the remanent transverse piezoelectric coefficient e(31f) was measured as -17.7 C/m(2).