Investigation of oxidation-induced strain in a top-down Si nanowire platform
Najmzadeh, Mohammad; Bouvet, Didier; Dobrosz, Peter; Olsen, Sarah; Ionescu, Adrian Mihai
2009

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Abstract

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate ≈100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found.

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Title Investigation of oxidation-induced strain in a top-down Si nanowire platform
Author(s) Najmzadeh, Mohammad ; Bouvet, Didier ; Dobrosz, Peter ; Olsen, Sarah ; Ionescu, Adrian Mihai
Published in Microelectronic Engineering
Volume 86
Issue 7-9
Pages 1961-1964
Date 2009
Publisher Elsevier
ISSN 0167-9317
Keywords
DOI https://doi.org/10.1016/j.mee.2009.03.086
Other identifier(s) View record in Web of Science
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2009-06-11

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