Investigation of oxidation-induced strain in a top-down Si nanowire platform

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate ≈100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found.


Published in:
Microelectronic Engineering, 86, 7-9, 1961-1964
Year:
2009
Publisher:
Elsevier
ISSN:
0167-9317
Keywords:
Laboratories:




 Record created 2009-06-11, last modified 2018-03-17

Fulltext:
Download fulltextPDF
External link:
Download fulltextURL
Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)