000138399 001__ 138399
000138399 005__ 20180913055305.0
000138399 037__ $$aCONF
000138399 245__ $$aHigh-k Dielectries for Use as ISFET Gate Oxides
000138399 260__ $$c2004
000138399 269__ $$a2004
000138399 336__ $$aConference Papers
000138399 700__ $$0243289$$g190103$$avan der Wal, P. D.
000138399 700__ $$0243293$$g188690$$aBriand, D.
000138399 700__ $$aMondin, G.
000138399 700__ $$aJenny, S.
000138399 700__ $$aJeanneret, S.
000138399 700__ $$aMillon, C.
000138399 700__ $$aRoussel, H.
000138399 700__ $$aDubourdieu, C.
000138399 700__ $$ade Rooij, N. F.$$g104887$$0243301
000138399 773__ $$tIEEE Sensors 2004$$q677-680
000138399 909C0 $$0252173$$pSAMLAB$$xU10329
000138399 909CO $$pconf$$ooai:infoscience.tind.io:138399
000138399 937__ $$aSAMLAB-CONF-2004-074
000138399 973__ $$rNON-REVIEWED$$sPUBLISHED$$aOTHER
000138399 980__ $$aCONF