The Influence of the pH on the Electrolyte-SiO2-Si System Studied by Ion-sensitive Fet Measurements and Quasistatic C-V Measurements

The responses of ion-sensitive FETs (ISFETs) with thermally grown SiO//2 gate regions and of electrolyte-SiO//2-Si (EOS) structures to stepwise changes in the pH were studied. A mechanism is also proposed in which one or other hydrogen-bearing species interacts with the surface states at the SiO//2-Si interface. This proposed mechanism is based on the observed time drift in the response of ISFETs and on the changes in the shape of the quasi-static C-V curves of the EOS structures.


Published in:
Thin Solid Films, 71, 2, 327-331
Year:
1980
ISSN:
00406090
Note:
4
Laboratories:




 Record created 2009-05-12, last modified 2018-03-17


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