Thermally isolated MOSFET for gas sensing application

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2°C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.


Published in:
IEEE Electron Device Letters, 22, 1, 11-13
Year:
2001
ISSN:
07413106
Note:
254
Laboratories:




 Record created 2009-05-12, last modified 2018-03-17


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