000134877 001__ 134877
000134877 005__ 20190316234519.0
000134877 0247_ $$2doi$$a10.1103/PhysRevLett.102.096402
000134877 02470 $$2ISI$$a000263911900041
000134877 037__ $$aARTICLE
000134877 245__ $$aDynamics of trion formation in GaAs quantum wells
000134877 269__ $$a2009
000134877 260__ $$c2009
000134877 336__ $$aJournal Articles
000134877 520__ $$aWe show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is substantiated by time-resolved photoluminescence experiments performed on a very high quality InxGa1-xAs quantum well sample, in which the photoluminescence contributions at the energy of the trion and exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor quantum well is explained by the same model.
000134877 6531_ $$aExciton
000134877 6531_ $$aTrion
000134877 6531_ $$aquantum well
000134877 6531_ $$aphotoluminescence
000134877 700__ $$0242009$$g131663$$aPortella-Oberli, Marcia
000134877 700__ $$0241446$$g114109$$aBerney, Jean
000134877 700__ $$0241445$$g130078$$aKappei, Lars
000134877 700__ $$0240870$$g105912$$aMorier-Genoud, François
000134877 700__ $$aSzczytko, Jacek$$g149638$$0241444
000134877 700__ $$aDeveaud-Plédran, Benoit$$g104954$$0241178
000134877 773__ $$j102$$tPhysical Review Letters$$q096402
000134877 8564_ $$uhttps://infoscience.epfl.ch/record/134877/files/PhysRevLett_102_096402.pdf$$zn/a$$s243747
000134877 909C0 $$xU10156$$0252003$$pLOEQ
000134877 909CO $$ooai:infoscience.tind.io:134877$$qGLOBAL_SET$$pSB$$particle
000134877 937__ $$aLOEQ-ARTICLE-2009-004
000134877 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000134877 980__ $$aARTICLE