TFA pixel sensor technology for vertex detectors

Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×1015 p/cm2. © 2005 Elsevier B.V. All rights reserved.

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Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment., 560, 122-126
IMT-NE Number: 403

Note: The status of this file is: Involved Laboratories Only

 Record created 2009-02-10, last modified 2018-01-28

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