Characterization of a thick layer a-Si : H pixel detector with TFA technology using a scanning electron microscope

The electron beam induced current (EBIC) technique was used to characterize a 32 μm thick hydrogenated amorphous silicon n-i-p diode deposited on top of an ASIC, containing several channels of active feedback pre-amplifiers (AFP) with peaking time of 5 ns. The homogeneity of the sample together with the edge effects induced by the unevenness of the ASIC substrate were studied with low doses of 10-30 keV electron beam. The degradation of a-Si:H pixel detectors was measured with intense electron beam. Their charge collection and transient time were characterized with a 660 nm pulsed laser before and after the thermal annealing. All the diodes show approximately a full recovery of charge collection after thermal annealing. © 2006 Elsevier B.V. All rights reserved.


Publié dans:
Journal of Non-Crystalline Solids, 352 (9-20), 1832-1836
Année
2006
Mots-clefs:
Note:
IMT-NE Number: 448
Laboratoires:




 Notice créée le 2009-02-10, modifiée le 2019-05-27

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