000133966 001__ 133966
000133966 005__ 20190527082505.0
000133966 0247_ $$2doi$$a10.1016/j.jnoncrysol.2005.12.054
000133966 037__ $$aARTICLE
000133966 245__ $$aCharacterization of a thick layer a-Si : H pixel detector with TFA technology using a scanning electron microscope
000133966 269__ $$a2006
000133966 260__ $$c2006
000133966 336__ $$aJournal Articles
000133966 500__ $$aIMT-NE Number: 448
000133966 520__ $$aThe electron beam induced current (EBIC) technique was used to characterize a 32 μm thick hydrogenated amorphous silicon n-i-p diode deposited on top of an ASIC, containing several channels of active feedback pre-amplifiers (AFP) with peaking time of 5 ns. The homogeneity of the sample together with the edge effects induced by the unevenness of the ASIC substrate were studied with low doses of 10-30 keV electron beam. The degradation of a-Si:H pixel detectors was measured with intense electron beam. Their charge collection and transient time were characterized with a 660 nm pulsed laser before and after the thermal annealing. All the diodes show approximately a full recovery of charge collection after thermal annealing. © 2006 Elsevier B.V. All rights reserved.
000133966 6531_ $$aAmorphous semiconductors
000133966 6531_ $$aDetectors
000133966 6531_ $$aRadiation
000133966 6531_ $$aSEM
000133966 6531_ $$aEBIC
000133966 6531_ $$aASIC
000133966 700__ $$0243398$$g190362$$aDespeisse, M.
000133966 700__ $$aSaramad, S.
000133966 700__ $$0243401$$g100192$$aBallif, C.
000133966 700__ $$aDunand, S.
000133966 700__ $$aJarron, P.
000133966 700__ $$aMorse, J.
000133966 700__ $$aSnigireva, I.
000133966 700__ $$aMiazza, C.
000133966 700__ $$aMoraes, D.
000133966 700__ $$aAnelli, G.
000133966 700__ $$aShah, A.
000133966 700__ $$aWyrsch, N.
000133966 773__ $$j352 (9-20)$$tJournal of Non-Crystalline Solids$$q1832-1836
000133966 8564_ $$zURL
000133966 8564_ $$uhttps://infoscience.epfl.ch/record/133966/files/paper_448.pdf$$zn/a$$s356321
000133966 909C0 $$xU11963$$0252194$$pPV-LAB
000133966 909CO $$qGLOBAL_SET$$pSTI$$ooai:infoscience.tind.io:133966$$particle
000133966 937__ $$aPV-LAB-ARTICLE-2006-003
000133966 973__ $$rREVIEWED$$sPUBLISHED$$aOTHER
000133966 980__ $$aARTICLE