Preliminary radiation tests of 32 µm thick hydrogenated amorphous silicon films
Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill. © 2005 Published by Elsevier B.V.
IMT-NE Number: 416
Record created on 2009-02-10, modified on 2016-08-08