Preliminary radiation tests of 32 µm thick hydrogenated amorphous silicon films

Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill. © 2005 Published by Elsevier B.V.


Published in:
Nuclear Instruments and Methods in Physics Research A: Accelerators, Spectrometers, Detectors and Associated Equipment, 552, 88-92
Year:
2005
Note:
IMT-NE Number: 416
Laboratories:


Note: The status of this file is: Involved Laboratories Only


 Record created 2009-02-10, last modified 2018-03-17

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