000133919 001__ 133919
000133919 005__ 20190316234503.0
000133919 022__ $$a00406090
000133919 02470 $$2ISI$$a000220510500109
000133919 0247_ $$2doi$$a10.1016/j.tsf.2003.11.036
000133919 037__ $$aARTICLE
000133919 245__ $$aHigh Efficiency p-i-n a-Si:H Solar Cells with Low Boron Cross-Contamination Prepared in a Large Area Single-Chamber PECVD Reactor
000133919 269__ $$a2004
000133919 260__ $$c2004
000133919 336__ $$aJournal Articles
000133919 500__ $$aIMT-NE Number: 374
000133919 520__ $$aIn this work, a new type of short water vapor treatment of the interface between the p- and i-layer is presented. This novel treatment is performed under vacuum below 1 mbar for 5 min and considerably reduces the i-layer boron contamination in amorphous silicon (a-Si:H) p-i-n solar cells prepared in single-chamber reactors. A significant advantage is that the substrate with the p-layer can remain loaded in the reactor during this oxidation treatment. The high effectiveness of this treatment in reducing the boron cross-contamination is directly supported by secondary ion mass spectroscopy measurements, by tracing the boron concentration depth profile across the p-i interface and by quantum efficiency measurements of the deposited cells. By applying this water vapor treatment, 0.3-μm-thick a-Si:H p-i-n solar cells of 1 cm2 with high initial conversion efficiencies of 10.1% are deposited in a commercial large-area (35×45 cm2) single-chamber PECVD KAI™ reactor and can clearly compete with cells deposited in multi-chamber systems. Light soaking of these cells for 1200 h at 50 °C leads to stabilized efficiencies of 8.2%. The relative typical efficiency degradation of 20% of such 0.3-μm-thick single-junction cells demonstrates that this treatment does not affect the stability in a negative manner. © 2003 Elsevier B.V. All rights reserved.
000133919 700__ $$aKroll, U.
000133919 700__ $$aBucher, C.
000133919 700__ $$aBenagli, S.
000133919 700__ $$aSchönbächler, I.
000133919 700__ $$aMeier, J.
000133919 700__ $$aShah, A.
000133919 700__ $$0241418$$g131626$$aBallutaud, J.
000133919 700__ $$0241906$$g105426$$aHowling, A.
000133919 700__ $$0240129$$g105413$$aHollenstein, C.
000133919 700__ $$aBüchel, A.
000133919 700__ $$aPoppeller, M.
000133919 700__ $$aSchönbächler, I.
000133919 773__ $$j451-452$$tThin Solid Films$$q525-530
000133919 8564_ $$uhttps://infoscience.epfl.ch/record/133919/files/paper_374.pdf$$zn/a$$s147481
000133919 909C0 $$xU11963$$0252194$$pPV-LAB
000133919 909C0 $$pCRPP
000133919 909C0 $$pSPC$$0252028
000133919 909CO $$qGLOBAL_SET$$pSB$$pSTI$$particle$$ooai:infoscience.tind.io:133919
000133919 937__ $$aPV-LAB-ARTICLE-2004-004
000133919 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000133919 980__ $$aARTICLE