000133896 001__ 133896
000133896 005__ 20181203021441.0
000133896 0247_ $$2doi$$a10.1016/S0927-0248(02)00448-8
000133896 022__ $$a09270248
000133896 037__ $$aARTICLE
000133896 245__ $$aMaterial and Solar Cell Research in Microcrystalline Silicon
000133896 269__ $$a2003
000133896 260__ $$c2003
000133896 336__ $$aJournal Articles
000133896 500__ $$aIMT-NE Number: 360
000133896 520__ $$aThis contribution describes the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchâtel in connection with deposition of μc-Si:H layers by very high frequency glow discharge deposition is related in detail. Corresponding layer properties w.r.t. material microstructure, hydrogen content, stability and electronic transport are referred to. Basic properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related: Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (Voc, Jsc and FF) obtained by IMT Neuchâtel and by other laboratories are listed and commented; the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. "micromorph" silicon tandem solar cells, are described, together with recent developments on the research and industrial front. © 2002 Elsevier Science B.V. All rights reserved.
000133896 700__ $$aShah, A.
000133896 700__ $$aMeier, J.
000133896 700__ $$aVallat-Sauvain, E.
000133896 700__ $$aWyrsch, N.
000133896 700__ $$aKroll, U.
000133896 700__ $$aDroz, C.
000133896 700__ $$aGraf, U.
000133896 773__ $$j78$$k1-4$$q469-491$$tSolar Energy Materials and Solar Cells
000133896 8564_ $$s433719$$uhttps://infoscience.epfl.ch/record/133896/files/paper_360.pdf$$zn/a
000133896 909C0 $$0252194$$pPV-LAB$$xU11963
000133896 909CO $$ooai:infoscience.tind.io:133896$$pSTI$$particle
000133896 937__ $$aPV-LAB-ARTICLE-2003-006
000133896 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000133896 980__ $$aARTICLE