Characterization of 13 µm and 30 µm thick Hydrogenated Amorphous Silicon Diodes Deposited over CMOS Integrated Circuits for Particle Detection Applications

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25μm CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed. © 2003 Elsevier B.V. All rights reserved.


Publié dans:
Nuclear Instruments & Methods in Physics Research A, 518, 357-361
Année
2003
Note:
IMT-NE Number: 370
Laboratoires:


Note: Le statut de ce fichier est: Laboratoires impliqués seulement


 Notice créée le 2009-02-10, modifiée le 2018-09-13

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