000133892 001__ 133892
000133892 005__ 20180913055107.0
000133892 0247_ $$2doi$$a10.1016/j.nima.2003.11.022
000133892 037__ $$aARTICLE
000133892 245__ $$aCharacterization of 13 µm and 30 µm thick Hydrogenated Amorphous Silicon Diodes Deposited over CMOS Integrated Circuits for Particle Detection Applications
000133892 269__ $$a2003
000133892 260__ $$c2003
000133892 336__ $$aJournal Articles
000133892 500__ $$aIMT-NE Number: 370
000133892 520__ $$aWe present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25μm CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed. © 2003 Elsevier B.V. All rights reserved.
000133892 700__ $$0243398$$aDespeisse, M.$$g190362
000133892 700__ $$aAnelli, G.
000133892 700__ $$aCommichau, S.
000133892 700__ $$aDissertori, G.
000133892 700__ $$aGarrigos, A.
000133892 700__ $$aJarron, P.
000133892 700__ $$aMiazza, C.
000133892 700__ $$aMoraes, D.
000133892 700__ $$aShah, A.
000133892 700__ $$aWyrsch, N.
000133892 700__ $$aViertel, G.
000133892 773__ $$j518$$q357-361$$tNuclear Instruments & Methods in Physics Research A
000133892 8564_ $$s251030$$uhttps://infoscience.epfl.ch/record/133892/files/paper_370.pdf$$zn/a
000133892 909C0 $$0252194$$pPV-LAB$$xU11963
000133892 909CO $$ooai:infoscience.tind.io:133892$$pSTI$$particle
000133892 937__ $$aPV-LAB-ARTICLE-2003-002
000133892 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000133892 980__ $$aARTICLE