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Abstract

Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline silicon (μc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity; the photoconductivity transient is mainly determined by transient of charge carrier concentration; at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained. © 2002 Elsevier Science B.V. All rights reserved.

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