Plasma Deposition of Thin Film Silicon: Cinetics Monitored by Optical Emission Spectroscopy

The optical emission spectroscopy technique is used to characterise the temporal behaviour of a pure silane plasma in the first 90 s after ignition of a static closed-chamber very high frequency glow discharge. Special interest is drawn to the formation of microcrystalline silicon (μc-Si:H) in absence of any hydrogen feedstock gas dilution. The kinetics of the emission lines of SiH* and Hα is reported. The deposited films are characterised by photothermal deflection spectroscopy, Fourier transform infra red (FT-IR) absorption and show typical microcrystalline fingerprints; for the first time, such material is used as absorber layer in n-i-p type solar cell devices. © 2002 Elsevier Science B.V. All rights reserved.


Published in:
Solar Energy Materials and Solar Cells, 74, 1-4, 539-545
Year:
2002
ISSN:
09270248
Note:
IMT-NE Number: 338
Laboratories:


Note: The status of this file is: Involved Laboratories Only


 Record created 2009-02-10, last modified 2018-03-17

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