Ultrafast Carrier Dynamics in Undoped Microcrystalline Silicon

We have studied ultrafast dynamics of photoexcited carriers in μc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in μc-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient B = 2×10-10 cm3 s-1 for deposition with silane dilution ratio ≈5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity.


Publié dans:
Materials Science and Engineering B, 69-70, 238
Année
2000
Note:
IMT-NE Number: 303
Laboratoires:


Note: Le statut de ce fichier est: Laboratoires impliqués seulement


 Notice créée le 2009-02-10, modifiée le 2019-03-16

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