000133854 001__ 133854
000133854 005__ 20190316234501.0
000133854 0247_ $$2doi$$a10.1016/S0921-5107(99)00302-5
000133854 037__ $$aARTICLE
000133854 245__ $$aUltrafast Carrier Dynamics in Undoped Microcrystalline Silicon
000133854 269__ $$a2000
000133854 260__ $$c2000
000133854 336__ $$aJournal Articles
000133854 500__ $$aIMT-NE Number: 303
000133854 520__ $$aWe have studied ultrafast dynamics of photoexcited carriers in μc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in μc-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient B = 2×10-10 cm3 s-1 for deposition with silane dilution ratio ≈5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity.
000133854 700__ $$aKudrna, J.
000133854 700__ $$aMaly, P.
000133854 700__ $$aTrojánek, F.
000133854 700__ $$aStepanek, J.
000133854 700__ $$aLechner, T.
000133854 700__ $$aPelant, I.
000133854 700__ $$aMeier, J.
000133854 700__ $$aKroll, U.
000133854 700__ $$aŠtěpánek, J.
000133854 773__ $$j69-70$$tMaterials Science and Engineering B$$q238
000133854 8564_ $$uhttps://infoscience.epfl.ch/record/133854/files/paper_303.pdf$$zn/a$$s119815
000133854 909C0 $$xU11963$$0252194$$pPV-LAB
000133854 909CO $$qGLOBAL_SET$$pSTI$$ooai:infoscience.tind.io:133854$$particle
000133854 937__ $$aPV-LAB-ARTICLE-2000-004
000133854 973__ $$rREVIEWED$$sPUBLISHED$$aOTHER
000133854 980__ $$aARTICLE