Extension of the a-Si:H Electronic Transport Model to the µc-Si:H: Use of the µt Product to Correlate Electronic Transport Properties and Solar Cell Performances
The aim of this communication is to show that it is possible to extend the model of the electronic transport developed for amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). By describing the electronic transport with the μ0τR products (mobility×recombination time) as a function of the Fermi level, we observed the same behaviour for both materials, indicating a similar type of recombination. Moreover, applying the normalized μ0τ0 product (mobility×life-time) obtained by combining the photoconductivity (σphoto) and the ambipolar diffusion length (Lamb) measured in individual layers, we are able, as in the case of a-Si:H, to predict the quality of the solar cells incorporating these layers as the active 〈i〉 layer.
IMT-NE Number: 314, http://www.unine.ch/web_pvlab/Publications/PS_files/preprint_314.pdf
Record created on 2009-02-10, modified on 2016-08-08