Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Technique
1995
Details
Title
Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Technique
Author(s)
Kroll, U. ; Meier, J. ; Keppner, H. ; Littlewood, S. D. ; Kelly, I. E. ; Giannoulès, P. ; Shah, A.
Published in
MRS Symp.
Volume
377
Pages
39-44
Date
1995
Note
IMT-NE Number: 199
Laboratories
PV-LAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > PV-LAB - Photovoltaics and Thin Film Electronics Laboratory
Scientific production and competences > EPFL Partners > Neuchâtel Campus > PV-Lab - Photovoltaics and Thin Film Electronics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Scientific production and competences > EPFL Partners > Neuchâtel Campus > PV-Lab - Photovoltaics and Thin Film Electronics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2009-02-10