Infoscience

Journal article

Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Technique

    Note:

    IMT-NE Number: 199

    Reference

    • PV-LAB-ARTICLE-1995-008

    Record created on 2009-02-10, modified on 2016-08-08

Fulltext

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