Origin and Incorporation Mechanism for Oxygen Contaminants in a Si:H and µc-Si:H Films prepared by the Very High Frequency (70 MHz) Glow Discharge Technique


Published in:
MRS Symp., 377, 39-44
Year:
1995
Note:
IMT-NE Number: 199
Laboratories:




 Record created 2009-02-10, last modified 2018-12-03


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