000133721 001__ 133721
000133721 005__ 20190112134559.0
000133721 0247_ $$2doi$$a10.1103/PhysRevB.50.10644
000133721 022__ $$a01631829
000133721 02470 $$2Scopus$$a2-s2.0-0037875246
000133721 037__ $$aARTICLE
000133721 245__ $$aHydrogen Diffusion in a-Si:H Stimulated by Intense Illumination
000133721 269__ $$a1994
000133721 260__ $$c1994
000133721 336__ $$aJournal Articles
000133721 500__ $$aIMT-NE Number: 182
000133721 520__ $$aHydrogenated amorphous silicon (a-Si:H) films have been thermally annealed at temperatures in the range 220-270 °C for 24-48 h either under intense visible light illumination (4-16 W/cm2) or in the dark. After each annealing, the hydrogen-concentration profile was measured with Rutherford-backscattering-spectrometry and elastic-recoil-detection-analysis ion-beam analysis methods. A model is proposed which shows that, in good agreement with our results, the hydrogen-diffusion constant DH is proportional to the power of illumination and also proportional to the loosely bonded hydrogen concentration. Other consequences of the model are discussed. © 1994 The American Physical Society.
000133721 700__ $$aGreim, O.
000133721 700__ $$aWeber, J.
000133721 700__ $$aBaer, Y.
000133721 700__ $$aKroll, U.
000133721 773__ $$j50$$tPhysical Review B$$k15$$q644-648
000133721 909C0 $$xU11963$$0252194$$pPV-LAB
000133721 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:133721
000133721 937__ $$aPV-LAB-ARTICLE-1994-006
000133721 973__ $$rREVIEWED$$sPUBLISHED$$aOTHER
000133721 980__ $$aARTICLE