000133705 001__ 133705
000133705 005__ 20180913055101.0
000133705 037__ $$aCONF
000133705 245__ $$aElectric Field Optimisation by Graded Low-Level Doping in Amorphous Silicon P-I-N Diodes
000133705 269__ $$a1994
000133705 260__ $$c1994
000133705 336__ $$aConference Papers
000133705 500__ $$aIMT-NE Number: 185
000133705 700__ $$aFischer, D.
000133705 700__ $$aShah, A.
000133705 773__ $$q500-502$$tExtended Abstracts of the Int. Conf. on Solid State Devices and Materials,
000133705 909C0 $$0252194$$pPV-LAB$$xU11963
000133705 909CO $$ooai:infoscience.tind.io:133705$$pconf$$pSTI
000133705 937__ $$aPV-LAB-CONF-1994-005
000133705 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000133705 980__ $$aCONF