Electric Field Optimisation by Graded Low-Level Doping in Amorphous Silicon P-I-N Diodes


Published in:
Extended Abstracts of the Int. Conf. on Solid State Devices and Materials,, 500-502
Year:
1994
Note:
IMT-NE Number: 185
Laboratories:




 Record created 2009-02-10, last modified 2018-03-17


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