Infoscience

Conference paper

Compensation of the Dangling-Bond Space-Charge in a-Si:H Solar Cells by Graded Low-Level Doping in the Intrinsic Layer

    Note:

    IMT-NE Number: 170

    Reference

    • PV-LAB-CONF-1994-004

    Record created on 2009-02-10, modified on 2016-08-08

Fulltext

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