Compensation of the Dangling-Bond Space-Charge in a-Si:H Solar Cells by Graded Low-Level Doping in the Intrinsic Layer


Published in:
12th EC Photovoltaic Solar Energy Conference, 1241-1244
Year:
1994
Note:
IMT-NE Number: 170
Laboratories:




 Record created 2009-02-10, last modified 2018-09-13


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