000133671 001__ 133671
000133671 005__ 20180913055101.0
000133671 0247_ $$2doi$$a10.1016/j.jcrysgro.2008.07.093
000133671 02470 $$2ISI$$a000262019400113
000133671 037__ $$aARTICLE
000133671 245__ $$a1150nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions
000133671 269__ $$a2008
000133671 260__ $$c2008
000133671 336__ $$aJournal Articles
000133671 700__ $$0241421$$aMereuta, A$$g151457
000133671 700__ $$0241422$$aIakovlev, V$$g125735
000133671 700__ $$0248088$$aCaliman, A$$g153596
000133671 700__ $$0242322$$aMutter, L$$g182820
000133671 700__ $$0242320$$aSirbu, A$$g111197
000133671 700__ $$0240239$$aKapon, E$$g105530
000133671 773__ $$j310$$q5178-5181$$tJ. Crystal Growth
000133671 909C0 $$0252035$$pLPN$$xU10158
000133671 909CO $$ooai:infoscience.tind.io:133671$$pSB$$particle
000133671 937__ $$aLPN-ARTICLE-2009-004
000133671 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000133671 980__ $$aARTICLE