Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantation
Dumas, C.; Grisolia, J.; BenAssayag, G.; Bonafos, C.; Schamm, S.; Arbouet, A.; Paillard, V.; Van den Boogaart, M.A.F.; Brugger, J.; Normand, P.
2008
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Résumé

We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask containing. After thermal annealing the implanted regions perfectly mimic the mask geometry. Energy-filtered transmission electron microscopy images and PL measurement reveal that smaller nanocrystals are formed near the edges of the implanted areas due to a dose edge effect.

Détails

Titre Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantation
Auteur(s) Dumas, C. ; Grisolia, J. ; BenAssayag, G. ; Bonafos, C. ; Schamm, S. ; Arbouet, A. ; Paillard, V. ; Van den Boogaart, M.A.F. ; Brugger, J. ; Normand, P.
Présenté à French Symposium on Emerging Technologies for Micro-nanofabrication, Toulouse, France, November 19 - 21 2008
Date 2008
Laboratoires LMIS1
Le document apparaît dans Production scientifique et compétences > STI - Faculté des sciences et techniques de l'ingénieur > IEM - Institute of Electrical and Micro Engineering > LMIS1 - Laboratoire de microsystèmes 1
Présentations & Talks
Travail produit à l'EPFL
Publié
Date de création de la notice 2009-01-26

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