OPTICALLY EXCITED (Ga, In, As, P) FILM LASERS

Optically excited (Fa, In, As, P) film lasers at 1. 3 and 1. 5 mu m have been investigated. The lasers showed single-mode emission and a tuning range of up to 160 nm. The laser threshold P//t and the differential quantum efficiency eta //D have been investigated in resonators with different reflectivities. Optimum results (P//t equals 100 mw/cm**2, eta //D equals 2, 5%) have been achieved in an asymmetric resonator with R//1 equals 0. 92, R//2 equals 0. 75. An upper limit for the carrier density during excitation of n less than equivalent to 1. 19**1**9 cm** minus **3 is estimated from near-field measurements.


Published in:
IEE Proceedings, Part J: Optoelectronics, 132, 1, 77-80
Year:
1985
Keywords:
Note:
Generaldirektion PTT, Technical Cent, Bern, Switz
Compilation and indexing terms, Copyright 2008 Elsevier Inc.
86010000232
QUANTUM EFFICIENCY
Laboratories:




 Record created 2009-01-20, last modified 2018-09-13


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