High resolution laser diagnostics for direct gap semiconductor materials
Salathe, R. P.; Gilgen, H. H.
1983

Abstract

The laser-induced luminescence of direct gap semiconductors can be measured with high spatial (1 μm) and temporal (<1 ns) resolution. A profiling technique is described for in-situ measurements during laser processing. It allows the evaluation of temperature, carrier density and band gap energy within the focal zone. The technique has been applied to (Al,Ga)As heterostructure material subjected to highly focused CW-Kr-ion laser radiation. The measurements reveal low temperature rises (<200 deg.C) at high excitation densities (>1 MW/cm2) and an inhomogeneous distribution of optically excited carriers for concentrations above 2×1017 cm-3

Details

Title High resolution laser diagnostics for direct gap semiconductor materials
Author(s) Salathe, R. P. ; Gilgen, H. H.
Published in Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium
Conference New York, NY, USA
Date 1983
Publisher North-Holland
Keywords
Note Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland
2121030
high resolution laser diagnostics
GaxAl1-xAs
direct gap semiconductor materials
laser-induced luminescence
profiling technique
laser processing
temperature
carrier density
band gap energy
focal zone
heterostructure
DOI https://doi.org/10.1557/PROC-17-109
Laboratories LOA
Record Appears in Scientific production and competences > STI - School of Engineering > STI Archives > LOA - Advanced Photonics Laboratory
Work outside EPFL
Conference Papers
Published
Record creation date 2009-01-20

Actions