Laser-Initiated Metal-Deposition on Gaas Substrates
1981
Abstract
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1200°C. The smallest size of the deposits was ≈4 μm
Details
Title
Laser-Initiated Metal-Deposition on Gaas Substrates
Author(s)
Rytz-Froidevaux, Y. ; Salathe, R. P. ; Gilgen, H. H.
Published in
Physics Letters A
Volume
84
Issue
4
Pages
216-218
Date
1981
Keywords
Note
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland Copyright 1981, IEE 1757166 0375-9601 GaAs substrates thermal dissociation trimethylaluminium dimethylzinc dimethylcadmium amorphous crystalline structures Cd laser initiated metal deposition Al Zn CVD
Laboratories
LOA
Record Appears in
Scientific production and competences > STI - School of Engineering > STI Archives > LOA - Advanced Photonics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2009-01-20