Laser-Initiated Metal-Deposition on Gaas Substrates
Rytz-Froidevaux, Y.; Salathe, R. P.; Gilgen, H. H.
1981

Abstract

The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1200°C. The smallest size of the deposits was ≈4 μm

Details

Title Laser-Initiated Metal-Deposition on Gaas Substrates
Author(s) Rytz-Froidevaux, Y. ; Salathe, R. P. ; Gilgen, H. H.
Published in Physics Letters A
Volume 84
Issue 4
Pages 216-218
Date 1981
Keywords
Note Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland Copyright 1981, IEE 1757166 0375-9601 GaAs substrates thermal dissociation trimethylaluminium dimethylzinc dimethylcadmium amorphous crystalline structures Cd laser initiated metal deposition Al Zn CVD
DOI https://doi.org/10.1016/0375-9601(81)90761-1
Laboratories LOA
Record Appears in Scientific production and competences > STI - School of Engineering > STI Archives > LOA - Advanced Photonics Laboratory
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2009-01-20

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