Laser-Initiated Metal-Deposition on Gaas Substrates

The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures of Cd have been deposited at temperatures between 200 and 1200°C. The smallest size of the deposits was ≈4 μm


Published in:
Physics Letters A, 84, 4, 216-218
Year:
1981
Keywords:
Note:
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland Copyright 1981, IEE 1757166 0375-9601 GaAs substrates thermal dissociation trimethylaluminium dimethylzinc dimethylcadmium amorphous crystalline structures Cd laser initiated metal deposition Al Zn CVD
Laboratories:




 Record created 2009-01-20, last modified 2018-09-13


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