Luminescence of laser irradiated (Al,Ga)As-multilayer structures
Gilgen, H. H.; Salathe, R. P.; Rytz-Froidevaux, Y.
1981

Abstract

A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed regions. The laser power density necessary for processing is about 0.53 MW/cm2. The processed region has a width of 1 μm and a depth of 0.2 μm

Details

Title Luminescence of laser irradiated (Al,Ga)As-multilayer structures
Author(s) Gilgen, H. H. ; Salathe, R. P. ; Rytz-Froidevaux, Y.
Published in Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds
Conference Bristol, UK
Date 1981
Publisher IOP
Keywords
Note Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland
1770678
(Al,Ga)As
multilayer structures
luminescence band
laser irradiation
laser power density
(Al,Ga)As:Ge
III-V semiconductor
Laboratories LOA
Record Appears in Scientific production and competences > STI - School of Engineering > STI Archives > LOA - Advanced Photonics Laboratory
Work outside EPFL
Conference Papers
Published
Record creation date 2009-01-20

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