Luminescence of laser irradiated (Al,Ga)As-multilayer structures

A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed regions. The laser power density necessary for processing is about 0.53 MW/cm2. The processed region has a width of 1 μm and a depth of 0.2 μm


Presented at:
Bristol, UK
Year:
1981
Publisher:
IOP
Keywords:
Note:
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland
1770678
(Al,Ga)As
multilayer structures
luminescence band
laser irradiation
laser power density
(Al,Ga)As:Ge
III-V semiconductor
Laboratories:




 Record created 2009-01-20, last modified 2018-03-17


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