000131339 001__ 131339 000131339 005__ 20180913055039.0 000131339 037__ $$aCONF 000131339 245__ $$aLaser generated (Al,Ga)As microstructures with high luminescence efficiency 000131339 260__ $$bIEEE$$c1981 000131339 269__ $$a1981 000131339 336__ $$aConference Papers 000131339 490__ $$aInternational Electron Devices Meeting 000131339 500__ $$aInst. of Appl. Phys., Univ. of Berne, Berne, Switzerland 000131339 500__ $$a1866009 000131339 500__ $$alaser generated (Al,Ga)As microstructures 000131339 500__ $$alaser irradiation 000131339 500__ $$aedge emitting LEDs 000131339 500__ $$aIII-V semiconductor 000131339 500__ $$aluminescence centers 000131339 500__ $$afocused light 000131339 500__ $$aCW Kr-ion laser 000131339 500__ $$alaser power density 000131339 500__ $$ahigh photoluminescence efficiency 000131339 500__ $$aemission spectrum 000131339 500__ $$aheating cycles 000131339 520__ $$aNew luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide and 0.2 μm thick are generated. The new luminescence centers are characterized by a high photoluminescence efficiency at room temperature and an emission energy 90-140 meV below the band-to-band recombination. They are of permanent nature: No changes in the emission spectrum or in the efficiency could be observed, if processed samples are subjected to heating cycles of up to 420°C. Edge emitting LEDs have been prepared from laser processed (Al,Ga)As heterostructure material. In the laser processed regions the diodes exhibit a light yield within the new luminescence band which is more than quadrupled at low currents. The light output decreases to values below the band-to-band recombination at densities above 2.0 kA/cm2 000131339 6531_ $$aaluminium compounds 000131339 6531_ $$agallium arsenide 000131339 6531_ $$aIII-V semiconductors 000131339 6531_ $$alaser beam applications 000131339 6531_ $$alight emitting diodes 000131339 6531_ $$aphotoluminescence 000131339 700__ $$aGilgen, H. H. 000131339 700__ $$aSalathe, R. P. 000131339 700__ $$aRytz-Froidevaux, Y. 000131339 7112_ $$cNew York, NY, USA 000131339 909C0 $$xU10346$$0252008$$pLOA 000131339 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:131339 000131339 937__ $$aLOA-CONF-1981-001 000131339 973__ $$sPUBLISHED$$aOTHER 000131339 980__ $$aCONF