Journal article

Interferometric measurement of the elongation of a pulsed diode laser

An interferometric technique was developed for detecting fast displacements of small areas in beam direction by less than λ/8. It utilizes a modified Michelson interferometer and a He-Ne laser light source. The technique was applied to measure the temporal and spatial evolution of the thermal mirror deformation of a GaAs-Ga1-xAlxAs single heterostructure laser diode. A small spot on the facet of the laser diode formed one mirror of the interferometer. The other mirror was moved linearly with time by applying a ramp voltage to a piezoelectric transducer. The diode was pulsed during this motion. The local elongation of the laser diode was evaluated from the interferometer output signal. The measured elongation of the active region at a time 1 μs after a 150-ns pulse with current density 48000 A/cm2 was between 4 and 20 nm, indicating a temperature rise of 2-11°C. The smallest elongations detected were in the range of 0.5-1 nm. The measured values are in substantial agreement with theoretical expectations for thermal model calculations

    Keywords: gallium arsenide ; light interference ; semiconductor lasers


    Univ. Berne, Switzerland

    Copyright 1972, IEE



    interferometric measurement


    pulse diode laser

    fast displacements of small areas

    Michelson interferometer

    thermal mirror deformation

    He-Ne laser light source

    GaAs-Ga1-xAlxAs single heterostructure laser diode

    0.5 to 1 nm


    Record created on 2009-01-20, modified on 2016-08-08


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