Infoscience

Journal article

The influence of doping gradient on temperature dependence of threshold current density of GaAs-injection lasers

On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has been examined and compared with different theoretical results. Assuming a linearly graded doping profile in the junction region a good quantitative agreement is obtained between theory and the experimental results

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