The influence of doping gradient on temperature dependence of threshold current density of GaAs-injection lasers

On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has been examined and compared with different theoretical results. Assuming a linearly graded doping profile in the junction region a good quantitative agreement is obtained between theory and the experimental results


Published in:
Solid-State Electronics, 14, 9, 843-7
Year:
1971
Keywords:
Note:
Univ. Bern, Switzerland
Copyright 1971, IEE
319608
0038-1101
doping gradient
temperature dependence
threshold current density
GaAs laser diodes
epitaxial solution growth method
Laboratories:




 Record created 2009-01-20, last modified 2018-09-13


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