Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to the interfaces between the GaAs matrix and InAs dots are probed using polarized excitation and detection. We suggest a possible role of local fields in models of the matrix-dot mixtures in the in-plane anisotropic response.


Published in:
27th International Conference on the Physics of Semiconductors, 2, 753-754
Presented at:
27th International Conference on the Physics of Semiconductors, Flagstaff, Arizona, USA, 26-30 July 2004
Year:
2005
Publisher:
American Institute of Physics
Keywords:
Laboratories:
SPC
CRPP




 Record created 2008-12-23, last modified 2018-09-13

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