5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect

We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.


Publié dans:
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551), 2, 132-133
Présenté à:
27th European Conference on Optical Communication, Amsterdam, Netherlands
Année
2001
Publisher:
IEEE
Mots-clefs:
Laboratoires:


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 Notice créée le 2008-09-29, modifiée le 2020-04-20

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