5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect
2001
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Abstract
We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.
Details
Title
5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect
Author(s)
Dainesi, Paolo ; Thévenaz, Luc ; Robert, Philippe
Published in
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)
Volume
2
Pages
132-133
Conference
27th European Conference on Optical Communication, Amsterdam, Netherlands
Date
2001
Publisher
IEEE
Keywords
Additional link
URL
Laboratories
THEVE
SCI-STI-LT
SCI-STI-LT
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > SCI-STI-LT - SCI STI LT Group
Scientific production and competences > STI - School of Engineering > STI Archives > THEVE - Thévenaz Group
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > STI Archives > THEVE - Thévenaz Group
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2008-09-29