000125263 001__ 125263
000125263 005__ 20190117210505.0
000125263 0247_ $$2doi$$a10.1016/j.sse.2009.02.014
000125263 02470 $$2ISI$$a000262973300064
000125263 02470 $$2ISI$$a000267692100022
000125263 037__ $$aCONF
000125263 245__ $$aA Single-Photon Detector Implemented in a130nm CMOS Imaging Process
000125263 260__ $$c2008
000125263 269__ $$a2008
000125263 336__ $$aConference Papers
000125263 520__ $$aWe report on a new single photon avalanche diode (SPAD) fabricated in a 130nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakdown. Thanks to this guard ring, unprecedented levels of miniaturization may be reached at no cost of added noise, decreased sensitivity or timing resolution. The detector integrated along with quenching and read out electronics was fully characterized. Optical measurements show the effectiveness of the guard ring and the high degree of electric field planarity across the sensitive region of the detector. With a photon detection probability of up to 30% and a timing jitter of 125 ps at full-width-half-maximum this SPAD is well suited for applications such as 3-D imaging, fluorescence lifetime imaging and biophotonics.
000125263 6531_ $$aSPAD
000125263 6531_ $$a130nm
000125263 6531_ $$aCMOS imaging
000125263 6531_ $$aNCCR-MICS
000125263 6531_ $$aNCCR-MICS/CL2
000125263 700__ $$0243793$$aGersbach, Marek$$g138330
000125263 700__ $$0240420$$aNiclass, Cristiano$$g138253
000125263 700__ $$aRichardson, Justin
000125263 700__ $$aHenderson, Robert
000125263 700__ $$aGrant, Lindsay
000125263 700__ $$0240305$$aCharbon, Edoardo$$g146991
000125263 7112_ $$aESSDERC$$cEdinburgh$$dSeptember 2008
000125263 909C0 $$0252106$$pAQUA$$xU12178
000125263 909CO $$ooai:infoscience.tind.io:125263$$pconf$$pSTI
000125263 937__ $$aAQUA-CONF-2008-011
000125263 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000125263 980__ $$aCONF