000125187 001__ 125187
000125187 005__ 20190316234309.0
000125187 037__ $$aCONF
000125187 245__ $$aA 130nm CMOS Single Photon Avalanche Diode
000125187 260__ $$c2007
000125187 269__ $$a2007
000125187 336__ $$aConference Papers
000125187 500__ $$aInvited Paper
000125187 520__ $$aThe first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.
000125187 6531_ $$aSPAD
000125187 700__ $$0240420$$aNiclass, Cristiano$$g138253
000125187 700__ $$0243793$$aGersbach, Marek$$g138330
000125187 700__ $$aHenderson, Robert K.
000125187 700__ $$aGrant, Lindsay
000125187 700__ $$0240305$$aCharbon, Edoardo$$g146991
000125187 7112_ $$aSPIE Optics East$$cBoston$$dSeptember, 2007
000125187 773__ $$j6766$$tProceedings of SPIE
000125187 8564_ $$zURL
000125187 8564_ $$s7864064$$uhttps://infoscience.epfl.ch/record/125187/files/6766-5.pdf$$zn/a
000125187 909C0 $$0252106$$pAQUA$$xU12178
000125187 909CO $$ooai:infoscience.tind.io:125187$$pconf$$pSTI$$qGLOBAL_SET
000125187 937__ $$aAQUA-CONF-2008-005
000125187 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000125187 980__ $$aCONF