Infoscience

Conference paper

Enhancement of the third harmonic generation efficiency in n-type Si and InP by cooling from room temperature to 80K

    Note:

    Proc. KISBN 824, Materials Science Forum vols 297-298, Proceeding 10th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuanie, August 31 - September 2, 1998, Eds Steponas Asmontas and Adolfas Dargys

    Reference

    • CRPP-CONF-1998-045

    Record created on 2008-05-13, modified on 2016-08-08

Fulltext

  • There is no available fulltext. Please contact the lab or the authors.

Related material