Enhancement of the third harmonic generation efficiency in n-type Si and InP by cooling from room temperature to 80K


Published in:
Proc. KISBN 824
Presented at:
KISBN 824
Year:
1998
Note:
Proc. KISBN 824, Materials Science Forum vols 297-298, Proceeding 10th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuanie, August 31 - September 2, 1998, Eds Steponas Asmontas and Adolfas Dargys
Laboratories:
SPC
CRPP




 Record created 2008-05-13, last modified 2018-09-13


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