Dislocation formation from a surface step in semiconductors: An ab initio study

The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large-scale first-principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60 degrees dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms.


Published in:
Physical Review B, 73, 9
Year:
2006
ISSN:
1098-0121
ISBN:
1098-0121
Other identifiers:
Laboratories:
SPC
CRPP




 Record created 2008-04-16, last modified 2018-01-28


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