Abstract

In situ Fourier transform infrared (FTIR) absorption spectroscopy has been used to determine the fractional depletion of silane in a radio-frequency (ri) glow discharge. The technique used a simple single-pass arrangement and was implemented in a large-area industrial reactor for deposition of amorphous silicon. Measurements were made on silane plasmas for a range of excitation frequencies. It was observed that, at constant plasma power, the fractional depletion increased from 35% at 13.56 MHz to 70% at 70 MHz. With a simple model based on the density continuity equations in the gas phase, it was shown that this increase is due to a higher dissociation rate and is largely responsible for the observed increase in the deposition rate with the frequency.

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